經歷
工業技術研究院 光電所 工程師
私立中原大學 物理學系 助理教授

現職
物理系副教授

專長
分子束磊晶(Molecular beam epitaxy)
光電化合物半導體材料與元件(Optoelectronics compound semiconductor material and devices)

研究領域
1. 分子束磊晶法成長光電化合物半導體材料之奈米結構與元件(Optoelectronics compound semiconductor nanostructure material and devices grown by molecular beam epitaxy)
2.半導體光激螢光、穿透、反射及拉曼散射譜研究(Photoluminescence, Transmission, Reflection, and Raman spectra)
3.量子點雷射(Quantum dot lasers)
4.自旋電子材料與元件(Spintronics material and devices)

可能之應用
半導體雷射(Semiconductor lasers)
發光二極體(Light emitting diodes)
電晶體(Transistors)

個人研究成果 (Selected paper 5 篇 )
1. Jyh-Shyang Wang , Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang, Gray Lin, Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei Chi, and Jim-Y Chi " Engineering laser gain spectrum using electronic vertically coupled InAs/GaAs quantum dots " IEEE Photonics Technol. Lett. Vol. 17, No. 8, pp. 1590-1592, (2005).

2. J. S. Wang, R. S. Hsiao, G. Lin, K. F. Lin, H. Y. Liu, C. M. Lai, L. Wei, C. Y. Liang, J. Y. Chi, A. R. Kovsh, N. A. Maleev, D. A. Livshits, J. F. Chen, H. C. Yu, and V. M. Ustinov " MBE growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 m m " J. Vac. Sci. Technol. B Vol. 22, No. 6, pp. 2663-2667, (2004).

3. J. S. Wang, A. R. Kovsh, R. S. Hsiao, L. P. Chen, J. F. Chen, T. S. Lay, and J. Y. Chi " High nitrogen content InGaAsN/GaAs single quantum well for 1.55 m m applications grown by molecular beam epitaxy " J. Crystal Growth Vol. 262, pp. 84-88, (2004).

4. J. S. Wang , A. R. Kovsh, L. Wei, J. Y. Chi, Y. T. Wu, P. Y. Wang, and V. M. Ustinov "MBE growth of high-quality GaAsN bulk layers" Nanotechnology Vol. 12, pp. 430-433, (2001).